The primary difference between LPCVD and other CVD techniques, such as Atmospheric Pressure CVD (APCVD) and Plasma-Enhanced CVD (PECVD), lies in the operating pressure. LPCVD operates at pressures ranging from 10 to 1000 Pa, which is significantly lower than atmospheric pressure. This lower pressure reduces the gas-phase reaction rate, leading to more uniform film deposition and better step coverage.
