What Are the Mechanisms Involved in Plasma Etching?
The mechanisms of plasma etching involve both physical and chemical interactions. The physical component includes the bombardment of the substrate by energetic ions, which can sputter away material. The chemical component involves reactive species in the plasma, such as ions, radicals, and neutral atoms, which can react with the substrate material to form volatile compounds that are then removed. The synergy between these mechanisms allows for highly controlled etching processes.
