The MOCVD process begins with the introduction of metal-organic precursors into a reaction chamber. These precursors are typically transported using a carrier gas such as hydrogen or nitrogen. Upon reaching the heated substrate, the precursors undergo various chemical reactions, including pyrolysis, oxidation, and reduction, leading to the formation of a thin film. The process parameters, such as temperature, pressure, and gas flow rates, are carefully controlled to achieve desired film properties.
